Method and apparatus for detecting alignment mark of semiconduct

Radiant energy – Means to align or position an object relative to a source or...

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2504922, H01J 3730

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active

050049259

ABSTRACT:
In a semiconductor device having a leveling metal layer for forming a flat surface on an alignment mark of a level-difference, charged particles are irradiated and scanned onto a region of the alignment mark, and information generated from the region of the alignment mark in accordance with the thickness of metal of a metal leveling-layer in the level-difference of the alignment mark is detected. Therefore, even when the alignment mark formed by the level-difference in the semiconductor device is buried under the leveling metal layer, the alignment mark can be detected exactly without adding excessive processes.

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patent: 4590382 (1986-05-01), Tabata
patent: 4871919 (1989-10-01), Donohue et al.
patent: 4885472 (1989-12-01), Young
patent: 4896045 (1990-01-01), Okunuki et al.

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