Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2001-10-03
2004-11-16
Rosasco, S. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C378S035000
Reexamination Certificate
active
06818357
ABSTRACT:
TECHNICAL FIELD
This invention relates to fabrication of photolithographic masks for semiconductor processing.
BACKGROUND
Photolithography uses an imaging system that directs radiation onto a patterned mask to form an image that then is projected onto a semiconductor wafer covered with light-sensitive photoresist.
REFERENCES:
patent: 5372916 (1994-12-01), Ogawa et al.
patent: 5465859 (1995-11-01), Chapple-Sokol et al.
patent: 5700602 (1997-12-01), Dao et al.
patent: 5935737 (1999-08-01), Yan
patent: 5958629 (1999-09-01), Yan et al.
patent: 6007324 (1999-12-01), Tzu et al.
patent: 6048652 (2000-04-01), Nguyen et al.
patent: 6178221 (2001-01-01), Levinson et al.
patent: 6258489 (2001-07-01), Stanton et al.
patent: 6294295 (2001-09-01), Lin et al.
patent: 0 569 123 (1993-11-01), None
patent: 11-305417 (1999-11-01), None
Pei-yang Yan et al., “EUV Mask Absorber Chacterization and Selection,” Photomask and Next-Generation Lithography Mask Technology VII, vol. 4066 pp. 116-123, Apr. 12-13, 2000.
Pei-yang Yan et al., “TaN EUVL Mask Fabrication and Characterization”, Emerging Lithographic Technologies V, Proceedings of Society for Optical Engineering vol. 4343 (2001) pp. 409-414.
Chistof Krautschik et al., “The Impact of the EUV Mask Phase Response on the Asymmetry of Bossung Curves as Predicted By Rigorous EUV Mask Simulations,” Emerging Lithographic Technologies V, Proceedings of Society for Optical Engineering vol. 4343 (2001) pp. 392-401.
“EUV Lithography- The Successor to Optical Lithography,” John E. Bjorkholm, Advanced Lithography Department, Technology and Manufacturing Group, Santa Clara, CA. Intel Corporation, Intel Technology Journal 3rdQuarter, 1998, pp. 1-8.
Fish & Richardson P.C.
Rosasco S.
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