Neutron detector based on semiconductor materials

Details Neutron detector based on semiconductor materials Neutron detector based on semiconductor materials

1997-01-08

1998-01-13

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437 24, 437 87, 437116, 437136, 437165, 437959, 148DIG40, 117 19, 117 41, 117 78, 117 81, 257429, 25037005, H01L 2126, H01L 310288, H01L 31115

Patent

active

057078793

ABSTRACT:
A neutron radiation detector is described. A semiconductor material is populated with helium three (.sup.3 He) atoms to increase its overall neutron capture efficiency. Upon capture of a neutron by a .sup.3 He atom, a tritium ion and a proton are generated with energies of 0.191 and 0.573 MeV, respectively. These energies are deposited in the semiconductor material creating electron-hole pairs. The electron-hole pairs are withdrawn from the material by the application of an electric field and are collected as charges at the terminals. The associated circuitry processes the charges into pulses with these being counted and their sizes measured. The results are recorded and displayed. The number of pulses are a measure of the number of neutrons absorbed in the detector and of the neutron flux of interest. In many instances the detector can also be used to detect and display non-neutron type radiation or simultaneously neutron and non-neutron forms of radiative activity.

REFERENCES:
patent: H147 (1986-11-01), Feldman et al.
patent: 3542608 (1970-11-01), Jensen et al.
patent: 4048508 (1977-09-01), Martin et al.
patent: 4210805 (1980-07-01), Kobayashi et al.
patent: 4255659 (1981-03-01), Kaufman
patent: 4419578 (1983-12-01), Kress
patent: 4597165 (1986-07-01), Capasso et al.
patent: 5019886 (1991-05-01), Sato et al.
patent: 5036202 (1991-07-01), Schulte
patent: 5216249 (1993-06-01), Jones et al.
patent: 5281822 (1994-01-01), Albrecht et al.
patent: 5321269 (1994-06-01), Kitaguchi et al.
patent: 5399863 (1995-03-01), Carron et al.

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