Method of producing polycrystalline silicon resistor

Details Method of producing polycrystalline silicon resistor Method of producing polycrystalline silicon resistor

1991-05-30

1993-02-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437918, 437 46, 437 47, 148DIG136, H01L 2170

Patent

active

051852853

ABSTRACT:
A metal film and a polysilicon film are formed in one wiring, in that after a first polysilicon film is formed, an insulating film is formed on a region where a high-resistance portion of the polysilicon film is to be formed and, then, a metal film is deposited thereon. Then, the metal film deposited on the insulating film is removed. Thereafter, the wiring is formed by photolithography.

REFERENCES:
patent: 4604789 (1986-08-01), Bourassa
patent: 4643777 (1987-02-01), Maeda

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