Fishing – trapping – and vermin destroying
Patent
1991-03-22
1993-02-09
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 7, 437 45, 437 46, 437913, 148DIG82, H01L 21265
Patent
active
051852799
ABSTRACT:
A method of manufacturing an insulated-gate type field effect transistor includes the steps of forming an insulating film, on a semiconductor substrate, forming a first polycrystalline silicon layer on the insulating film, forming a second polycrystalline silicon layer on the frist polycrystalline silicon layer, patterning the first and second polycrystalline silicon layers to form a gate electrode and a masking layer, doping an impurity of a first conductivity type in the semiconductor substrate using the gate electrode and the masking layer as masks, thereby forming a source region and a drain region, starting etching the masking layer, detecting a natural oxide film on the gate electrode, stopping the etching, and ion-implanting an impurity of a second conductivity type in a region of the semiconductor substrate under the gate electrode through the gate electrode, thereby forming a channel-doped region. In this method, after the source and drain regions are formed, the impurity of the second conductivity type is ion-implanted in the substrate through the thin gate electrode to form the channel-doped region.
REFERENCES:
patent: 4590665 (1986-05-01), Owens et al.
patent: 4683637 (1987-08-01), Varker et al.
Hearn Brian E.
Kabushiki Kaisha Toshiba
Nguyen Tuan
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