Fishing – trapping – and vermin destroying
Patent
1991-06-12
1993-02-09
Thomas, Tom
Fishing, trapping, and vermin destroying
437 40, 437 80, 437175, 437229, 437912, 437944, 148DIG100, H01L 2170
Patent
active
051852772
ABSTRACT:
Disclosed is a method for making a mushroom gate for a microwave transistor. Three masking layers are deposited on the semiconductor body of a transistor. At least two of these masking layers are different and have selective solvents. After the opening of the external layer, the intermediate layer is dissolved with sub-etching with respect to the external layer, then the base of the gate is etched in the internal layer. The edges of the sub-etching prevent the metal deposited on the mask from adhering to the gate, thus facilitating the lift-off of the mask. Application to microwave transistors with symmetrical or disymmetrical mushroom gate.
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patent: 4337115 (1982-06-01), Ikeda et al.
patent: 5006478 (1991-04-01), Kobayashi et al.
IEEE Transactions on Electronic Devices, vol. ED-32, No. 6, Jun. 1985, pp. 1042-1046, IEEE, U.S., P. C. Chao et al.: "Electron-Beam Fabrication of GaAs Low-Noise MESFET's Using a New Trilayer Resist Technique".
IEEE Electron Device Letters, vol. EDL-4, No. 2, Feb. 1983, pp. 42-44, IEEE, U.S., S. G. Bandy et al.: "Submicron GaAs Microwave FET's with Low Parasitic Gate and Source Resistances".
Chapuis Martine
Tung Pham N.
Thomas Tom
Thomson Composants Microondes
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