Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2001-12-13
2004-07-20
Arbes, Carl J. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S878000, C436S169000, C436S106000, C436S107000, C436S110000, C436S113000, C436S169000, C257SE21508
Reexamination Certificate
active
06763585
ABSTRACT:
CROSS REFERENCE TO RELATED DOCUMENT
The present application claims the benefit of Japanese Patent Application No. P2000-381803, filed Dec. 15, 2000.
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention belongs to the technical field of a method for producing a micro bump on a circuit board of an integrated circuit chip, glass, crystal or the like.
2. Description of the Related Art
Conventionally, in the case where an integrated circuit chip is mounted on an integrated circuit board, or in the case where an integrated circuit board is mounted on a circuit board, furthermore in the case where an integrated circuit chip is directly mounted on a circuit board, various chip mounting technologies are used.
For example, an ACF (Anisotropic Conductive Film) method for connecting an integrated circuit chip to a circuit board by an anisotropic conductive bonding, or an SBB (Stud Bump Bonding) method for bonding an integrated circuit chip and a circuit board with a conductive paste, otherwise a method such as a plating method for obtaining a bump by forming and phasing a plated layer using a resist on an electrode, is used.
However, according to the aforesaid conventional method, after the integrated circuit chip is produced, since it is necessary to form bumps on the respective individual integrated circuit chips, it is difficult to form bumps with good accuracy, and in the case especially where the number of pins of the integrated circuit chip or the integrated circuit board is increased, it is difficult to carry out mounting with a good yield.
Furthermore, in the conventional method, since the bump is formed after being cut into individual chips, in the case where the same processing is carried out for a large quantity of chip, it takes a long time.
Moreover, in the conventional method, for example, a coating step of sealant in an SBB (Stud Bump Bonding) method or a GBS method, or a substrate washing step in an ACF (Anisotropic Conductive Film) method and a temporary crimping step and the like of ACF are necessary, thus posing a problem in that the man-hour in the mounting step is increased.
SUMMARY OF THE INVENTION
Therefore, an object of the present invention is to provide a method capable of solving such problems, and producing the micro bump in a short time with high accuracy even in the case where the number of pins of the integrated circuit chip or the integrated circuit board is increased.
The above object of the present invention can be achieved by a method of the present invention for producing a micro bump is provided with: a step of forming a resist of a predetermined pattern on a substrate; a step of forming a bump resist mixed with micro metallic powder on the substrate on which the resist is formed; a step of removing the resist; and a step of removing a resist component in the bump resist, whereby forming the micro bump comprising the micro metallic powder on the substrate.
According to the present invention, a resist in accordance with a predetermined pattern is first formed on a substrate. Next, on the substrate formed with the resist, a bump resist mixed with micro metallic powder is formed. Continuously, the resist is removed. As a result, on the substrate, there remains the bump resist corresponding to the predetermined pattern. Furthermore, by removing a resist component in this bump resist, on the substrate, there is formed the micro bump consisting of the micro metallic powder.
As described above, according to the present invention, since the micro bump is formed by the photo etching technology using the bump resist containing the micro metallic powder, patterning of very high accuracy is possible as compared to the conventional method. Further, even in the case where the number of pins of the integrated circuit chip or the integrated circuit board is increased, it is possible to easily connect the integrated circuit chip and the integrated circuit board, or the integrated circuit board and the circuit board, or the integrated circuit chip and the circuit board. Furthermore, by using the bump resist containing the micro metallic powder, it is possible to form the micro bump of minute width simply by forming a resist pattern of a desired width. Furthermore, since the photo etching technology is used, it is possible to incorporate into a semiconductor process to produce the integrated circuit chip or the integrated circuit board, making it is possible to form the necessary number of micro bumps on a large wafer at one time, so that it is possible to carry out a processing for a large quantity of the integrated circuit chip or the integrated circuit board in a short time. Moreover, since it is possible to sufficiently increase the thickness of the micro bump, connection with a lead can be ensured.
The above object of the present invention can be achieved by a method of the present invention for producing the micro bump is provided with: a step of forming a resist of a predetermined pattern on the substrate; a step of forming a bump resist mixed with micro metallic powder being made thicker than the resist on the substrate on which the resist is formed; a step of removing the resist; and a step of removing a resist component in the bump resist, whereby forming the micro bump comprising the micro metallic powder on the substrate.
According to the present invention, a resist in accordance with a predetermined pattern is first formed on a substrate. Next, on the substrate formed with the resist, the bump resist mixed with the micro metallic powder is formed with a thickness greater than that of the resist. Continuously, the bump resist of the bump resist formed on the resist is removed. As a result, the bump resist corresponding to the predetermined pattern remains on the substrate. Therefore, by removing the resist component in this bump resist, the micro bump consisting of the micro metallic powder is formed on the substrate.
As described above, according to the present invention, since the micro bump is formed by the photo etching technology using the bump resist containing the micro metallic powder, patterning of very high accuracy is possible as compared to the conventional method. Further, even in the case where the number of pins of the integrated circuit chip or the integrated circuit board is increased, it is possible to easily connect the integrated circuit chip and the integrated circuit board, or the integrated circuit board and the circuit board, or the integrated circuit chip and the circuit board. Furthermore, by using the bump resist containing the micro metallic powder, it is possible to easily form the micro bump of minute width simply by forming the resist pattern of a desired width. Furthermore, since the photo etching technology is used, it is possible to incorporate into a semiconductor process to produce the integrated circuit chip or the integrated circuit board, making it possible to form the necessary number of the micro bump on a large wafer at one time, it is possible to carry out a processing for a large quantity of the integrated circuit chip or the integrated circuit board in a short time. Moreover, since it is possible to sufficiently increase the thickness of the fine bumps, connection with a lead can be ensured.
The above object of the present invention can be achieved by a method of the present invention for producing the micro bump is provided with: a step of forming a resist of a predetermined pattern on the substrate; a step of forming a bump resist mixed with the micro metallic powder on the substrate having on which the resist is formed; a step of removing the resist and a bump resist formed on the resist out of the bump resist; and a step of removing a resist component in the bump resist, whereby forming the micro bump comprising the micro metallic powder on the substrate.
According to the present invention, a resist in accordance with a predetermined pattern is first formed on a substrate. Next, on the substrate formed with the resist, the bump resist mixed with the micro metallic powder is formed. Conti
Arbes Carl J.
Nixon & Vanderhye PC
Phan Tim
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