SOI DRAM with field-shield isolation and body contact

Details SOI DRAM with field-shield isolation and body contact SOI DRAM with field-shield isolation and body contact

1995-06-05

1996-04-16

Thomas, Tom

Fishing, trapping, and vermin destroying

437 21, 437 60, 437919, H01L 218242

Patent

active

055082190

ABSTRACT:
An SOI deep-trench DRAM having body contacts and field shield isolation makes contact between the SOI device layer and the field shield layer at selected sites between adjacent deep trench capacitors. The field shield layer is biased negative to provide better isolation and to set the body potential of the array transistors.

REFERENCES:
patent: 5369049 (1994-11-01), Acocella et al.
patent: 5384277 (1995-01-01), Hsu et al.

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