Semiconductor laser, optical pickup device, and optical record a

Coherent light generators – Particular active media – Semiconductor

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372 45, H01S 319

Patent

active

059404230

ABSTRACT:
A semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of steps of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction. In an optical pickup device using a semiconductor laser as a light source thereof, the semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction. In an optical record and/or reproducing apparatus using semiconductor laser as a light source thereof, the semiconductor laser comprises: a substrate, a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer; and the second cladding layer has a plurality of steps of equivalent complex index of refraction disposed to be parallel to p-n junction direction and to be perpendicular to a cavity direction.

REFERENCES:
patent: 4509173 (1985-04-01), Umeda et al.

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