Single-poly EEPROM cell that is programmable and erasable in a l

Details Single-poly EEPROM cell that is programmable and erasable in a l Single-poly EEPROM cell that is programmable and erasable in a l

1998-04-01

1999-08-17

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518518, 36518529, 257314, 257319, G11C 1604

Patent

active

059403241

ABSTRACT:
A single-poly EPROM cell, which has spaced-apart regions of opposite conductivity formed in the base region and a thin layer of tunnel oxide, is formed in a triple-well CMOS-compatible process. By utilizing a triple-well structure and a thin layer of tunnel oxide, the cell of the present invention is both electrically programmable and erasable in a low-voltage, i.e., +3.3V environment.

REFERENCES:
patent: 5280446 (1994-01-01), Ma et al.
patent: 5457652 (1995-10-01), Brahmbhatt
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5515319 (1996-05-01), Smayling et al.
patent: 5612913 (1997-03-01), Cappelletti et al.
Ohnakado, T., et al., "Novel Electron Injection Method Using Band-to-Band Tunneling Induced Hot Electron (BBHE) for Flash Memory with a P-channel Cell," IEDM 1995, pp. 279-282.
Chan, T.Y. et al., "The Impact of Gate-Induced Drain Leakage Current on MOSFET Scaling," IEDM, 1987, 4 pages.

Affiliated with

Also associated with

Rating

Single-poly EEPROM cell that is programmable and erasable in a l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Single-poly EEPROM cell that is programmable and erasable in a l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Single-poly EEPROM cell that is programmable and erasable in a l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-321337