Semiconductor device having non-metallic connection zones

Details Semiconductor device having non-metallic connection zones Semiconductor device having non-metallic connection zones

1977-09-27

1979-07-17

James, Andrew J.

357 34, 357 68, 357 71, H01L 2904, H01L 2348, H01L 2944

Patent

active

041617452

ABSTRACT:
A semiconductor device includes a silicon substrate having an insulating layer with a window. A silicon layer is deposited on the insulating layer and on the silicon substrate surface in the window. This silicon layer has n-type and p-type conductive layer parts which adjoin each other within the window and which each serve as both a connection conductor and an electrode of an active zone of the device. Semiconductor devices in accordance with the invention feature very small surface areas, and are thus particularly suitable for high frequency operation.

REFERENCES:
patent: 3600651 (1971-08-01), Duncan
patent: 3758830 (1973-09-01), Jackson
patent: 3837071 (1974-09-01), Ronen
patent: 3881242 (1975-06-01), Nuttall et al.
patent: 3902188 (1975-08-01), Jacobson
patent: 3980507 (1976-09-01), Carley
patent: 4062034 (1977-12-01), Matsushita
patent: 4074304 (1978-02-01), Shiba

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