1977-07-11
1979-07-17
Wojciechowicz, Edward J.
357 42, 357 46, 357 59, 357 45, H01L 2702
Patent
active
041617410
ABSTRACT:
The invention relates to a JFET memory in which the information at the gate electrodes of the JFET's is stored and read-out non-destructively. Each JFET has an IGFET structure situated entirely within the JFET and the gate of which is coupled to the source or drain of the JFET. The information can be refreshed periodically at cell level (that is without external amplifiers) by means of said IGFET.
REFERENCES:
patent: 4063274 (1977-12-01), Dingwall
patent: 4085498 (1978-04-01), Rideout
Collet Marnix G.
Koomen Joannes J. M.
Salters Roelof H. W.
Briody Thomas A.
Connors, Jr. Edward J.
Dinardo Jerry A.
U.S. Philips Corporation
Wojciechowicz Edward J.
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