Semiconductor device and its manufacturing method

Details Semiconductor device and its manufacturing method Semiconductor device and its manufacturing method

1998-08-28

1999-08-17

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

257617, 257913, 438471, H01L 2924, H01L 2932, H01L 2936

Patent

active

059397705

ABSTRACT:
A denuded zone DZ least liable to generate defects is formed in a surface layer zone 12 of a semiconductor wafer 10. In an inner layer zone 18 of the semiconductor wafer 10, micro defects BMD for gettering of impurity metal are made. In the inner layer zone 18, the precipitation of oxygen decreases with the depth. As a result, mechanical strength can be maintained while improving the gettering performance of impurity metal.

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patent: 5674756 (1997-10-01), Satoh et al.
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