High quality capacitor for sub-micrometer integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257307, H01L 2704

Patent

active

059397667

ABSTRACT:
A capacitor is provided for analog applications which can be fabricated with processes conventionally employed to fabricate digital circuitry and which has line spacing that is smaller than interlayer spacing. The capacitor of the present invention is based on intralayer capacitive coupling, rather than interlayer capacitive coupling which is conventionally employed in prior art capacitors. A capacitance can be achieved with the capacitor of the present invention that is higher than can be obtained with conventional capacitors occupying an area on the integrated circuit structure having similar size. Additionally, the capacitor of the present invention can be formed from upper metal layer such as metal-3, metal-4, and metal-5, and when the capacitor is formed from any of the upper metal layers the parasitic capacitance to ground is small.

REFERENCES:
patent: 5208725 (1993-05-01), Akcasu
patent: 5459633 (1995-10-01), Kosslowski et al.
patent: 5583359 (1996-12-01), Ng et al.
patent: 5589709 (1996-12-01), Dobkin et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High quality capacitor for sub-micrometer integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High quality capacitor for sub-micrometer integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High quality capacitor for sub-micrometer integrated circuits will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-317188

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.