Semiconductor detector for infrared radiation and method for man

Details Semiconductor detector for infrared radiation and method for man Semiconductor detector for infrared radiation and method for man

1997-10-28

1999-08-17

Westin, Edward P.

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

2503381, G01J 520

Patent

active

059397225

ABSTRACT:
A semiconductor detector for infrared radiation is manufactured by the steps of depositing an auxiliary layer on a main surface of a carrier, depositing a membrane layer provided with at least one opening onto the auxiliary layer, selectively etching the auxiliary layer through the at least one opening of the membrane layer, so that a hollow space arises in the auxiliary layer, sealing the hollow space by depositing a covering on th membrane layer, and fashioning a detector element on the covering by depositing a material sensitive to infrared radiation within a region of the covering that is bounded by the hollow space therebelow.

REFERENCES:
patent: 3801949 (1974-04-01), Larrabee
patent: 5449910 (1995-09-01), Wood et al.
patent: 5596219 (1997-01-01), Hierold
patent: 5760455 (1998-06-01), Hierold et al.
"Thermoelectric Infrared Sensors in CMOS Technology," Lenggenhager, et al., Sensors and Actuators A, 37-38 (1993), pp. 216-220.

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