Surface acoustic wave element and method of manufacturing the sa

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

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310313R, H01L 4116

Patent

active

053431073

ABSTRACT:
A surface acoustic wave element has a diamond layer, a piezoelectric thin film formed on the diamond layer, and a pair of electrodes for generating a surface acoustic wave having a specific wavelength and extracting the surface acoustic wave, wherein at least one electrode is a copper electrode epitaxially grown on the surface of the diamond layer. To manufacture this surface acoustic wave element, after the diamond layer is formed on a substrate by epitaxial growth, the copper electrodes each having the predetermined shape are formed on the surface of the diamond layer by epitaxial growth. In the surface acoustic wave element having the above structure, since the copper electrodes formed on the diamond layer consist of high-quality singlecrystal copper, resistances to electromigration and stress migrations can be increased. As a result, there is provided an excellent surface acoustic wave element free from electrical defects caused by degradation and failure of the copper electrodes or free from degradation of the electrical characteristics.

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Diamond and Related Materials, by M. W. Geis "Device quality diamond substrates" pp. 684-687.
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CVD Copper Metallurgy for ULSI Interconnections by Arita et al. IEEE IEDM 90 pp. 39-42 & 286 IEDM p. 91.
Large--Electromigration-Resistance Copper Interconnect Technology for Sub-Half-Micron ULSI's by Ohmi et al. 1991 IEEE IEDM 91-285,287,288.

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