Semiconductor device, production method therefor, method for tes

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324765, G01R 3102

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active

058217622

ABSTRACT:
A high-speed, high-density, small-sized, low-cost semiconductor device wherein the feeder substrate 2 for supplying power to the semiconductor elements 3 as a bare chip has the containers 2a for containing the semiconductor elements 3, the semiconductor elements 3 are bonded to the wiring layer 1b of the signal transmission substrate 1 for transmitting signals to the semiconductor elements 3 and contained in the containers 2a, the containers 2a are covered with the signal transmission substrate 1, and the signal transmission substrate 1 is superposed upon and bonded to the feeder substrate 2.

REFERENCES:
patent: 5138436 (1992-08-01), Koepf
patent: 5198963 (1993-03-01), Gupta et al.
patent: 5262351 (1993-11-01), Bureau et al.
patent: 5440239 (1995-08-01), Zappella et al.
patent: 5494856 (1996-02-01), Beaumont et al.
"Various Problems of Multi-Chip Modules", Electronics Packaging Technology, May 1993, pp. 47-51.
"Development Trends, Purposes and Problems of Surface Laminar Circuits", Society for Hybrid Microelectronics, Nov. 5, 1993, pp. 19-23.
"Bare Chip Test Techniques for Multichip Modules", Proceedings of 40th Electronic Components & Technology Conference, 1990, pp. 554-558 (Month Unavailable).
"Very High Speed Multilayer Interconnect Using Photosensitive Polymides", Microelectronics, 1988, pp. 363-365 (Month Unavailable).

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