Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1990-12-07
1994-08-30
Kuntz, Curtis
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307253, 307520, 307542, H03K 1760, H03K 500
Patent
active
053430980
ABSTRACT:
A snubber circuit, for absorbing voltage spikes applied to a power semiconductor device used as a switching means, utilizes the junction capacitance of a directly connected semiconductor device, thereby avoiding the need for a separate high-voltage capacitor. Embodiments shown use either a MOSFET or a bipolar transistor with a resistor connected in parallel between the gate (base) and the source (emitter) of the MOSFET (or bipolar transistor.) The snubber circuit of the present invention may also be a module integrally formed on a radiating base of the power semiconductor device.
REFERENCES:
patent: 4131908 (1978-12-01), Dank et al.
patent: 4251743 (1981-02-01), Hareyama
patent: 4365171 (1982-12-01), Archer
patent: 4400711 (1983-08-01), Avery
patent: 4403269 (1983-09-01), Carroll
patent: 4551643 (1985-11-01), Russell et al.
patent: 4613932 (1986-09-01), Cibulka et al.
patent: 4697199 (1987-09-01), De Graaff et al.
patent: 4717996 (1988-01-01), Bourke et al.
patent: 4885657 (1989-12-01), Griining
patent: 4894567 (1990-01-01), Lenk
patent: 4914540 (1990-04-01), Tabata et al.
patent: 4924344 (1990-05-01), Guajardo
patent: 4972292 (1990-11-01), Petersen
Fuji Electric & Co., Ltd.
Kuntz Curtis
Tran Sinh
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