Multi-layer gate structure

Details Multi-layer gate structure Multi-layer gate structure

1997-02-13

1998-10-13

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257769, 257770, H01L 2348, H01L 2352, H01L 2940

Patent

active

058216235

ABSTRACT:
A method of forming a multi-layer suicide gate structure for a MOS type semiconductor device that includes the processing steps of first providing a substrate, then depositing a gate oxide layer on the substrate, then depositing a first refractory metal silicide layer which has a first stoichometry on the gate oxide layer, and finally depositing a second refractory metal silicide layer which has a second stoichometry different than the first stoichometry on the first deposited refractory metal silicide layer.

REFERENCES:
patent: 4816879 (1989-03-01), Ellwanger
patent: 4872050 (1989-10-01), Okamoto et al.
patent: 4946803 (1990-08-01), Ellwanger
patent: 5010037 (1991-04-01), Lin et al.
patent: 5635765 (1997-06-01), Larson
Tungsten Silicide Formation From Sequentially Sputtered Tungsten And Silicon Films--J. M. Molarius, et al--Elsevier Science Publishers B.V. .COPYRGT.1991, pp. 383-390.
Lanthanum Silicide Formation In Thin La-Si Multilayer Films--C.C. Hsu, et al, vol. 41/Nos. 4-6/pp. 1425 to 1427/1990.
Interfacial Reactions and Thermal Stability Of Ultrahigh Vacuum Deposited Multilayered Mo/Si Structures--J. M. Liang et al--J. Appl. Phys. 79 (8), 15 Apr. 1996, pp. 4072-4077.
Examples For The Improvements In AES Depth Profiling Of Multilayer Thin Film Systems By Application Of Factor Analysis Data Evaluation--U. Scheithauer, .COPYRGT.Springer-Verlag 1995, pp. 464-467.
Structure And Magnetism of Fe/Si Multilayers Grown By Ion-Beam-sputtering--A. Chaiker et al, vol. 53, No. 9, pp. 5518-5529--1 Mar. 1996.
Formation Of Amorphous And Crystalline Phases, And Phase Transition By Solid-State Reaction in Zr/Si Multilayer Thin Films--Jae-Yeob Shim et al, .COPYRGT.1995 Elsevier Science S.A., pp. 102-107.
Characterization Of The Titanium Silicon Two/Si Interface In Titanium Disilicide Films On Silicon, Formed By Deposition Of Alternate Titanium-Layers And Annealing--P. Revva et al, J. Appl. Phys. 75(9), 1 May 1994, pp. 4533-4538.
Profiles And Chemistry Effects In Polysilicon And Tungsten Silicide EPROM "Stack" Etching--Daniel L. Flamm, et al, 24/SPIE vol. 1803 (1992), pp. 24-29.
Formation OF Sm Silicides on Si(111): Composition And Epitaxy--C. Wigren, et al, .COPYRGT.1993 Elsevier Science Publishers B.V., pp. 254-259.
Initial Evolution Of Cobalt Silicides In The Cobalt/Amorphous-Silicon Thin Film System--Hideo Miura, et al, Mat. Res. Soc. Symp. Proc. vol. 230, .COPYRGT.1992 Materials Research Society, pp. 139-144.
Initial Sequence And Kinetics Of Silicide Formation In Cobalt/Amorphous-Silicon Multilayer Thin Films--H. Mirua, et al, J. Appl. Phys. 70 (8), 15 Oct. 1991, pp. 4287-4294.
Silicide Formation By Solid State Reaction Of Mo-Ni And Mo-Co Films With Si(100)* -R.S. Rastogi, et al, .COPYRGT.Elsevier Sequoia/Printed in the Netherlands, pp. 107-112.
Formation Of TiSi.sub.2 From Titanium and Amorphous Silicon Layers For Local Interconnect Technology--A. A. Bos, et al, .COPYRGT.Elsevier Sequoia/Printed in the Netherlands, pp. 169-178.
Microstructural Aspects Of Nickel Silicide Formation In Evaporated Nickel-Silicon Multilayer Thin Films--Karen Holloway et al, Mat. Res. Soc. Symp. Proc. vol. 159. .COPYRGT.1990 Materials Research Society, pp. 153-157.
Interdiffusion And Short-Range Order In Amorphous Ta-Si Multilayer Structures--H. L. Meyerheim et al., J. Appl. Phys. 68 (6), 15 Sep. 1990, pp. 2694-2701.
Thermally Induced Structural Modification of Mo-Si Multilayers--D.G. Stearns et al., J. Appl. Phys. 67 (5), 1 Mar. 1990, pp. 2415-2427.
Fabrication of Superlattice Structures By Plasma Controlled Magnetron Sputtering*--T. Hata et al., .COPYRGT.Elsevier Sequoia/Printed in the Netherlands, pp. 467-473.
Stresses In Sputtered Ti-Si Multilayers And Polycrystalling Silicide Films--P. J. J. Wessels, et al., J. Appl. Phys. 63 (10), 15 May 1988, pp. 4979-4982.
Interfacial Reactions In Titanium--Silicon Multilayers--Karen Holloway et al, Mat. Res. Soc. Symp. Proc. Vo. 77. .COPYRGT.1987 Materials Research Society; pp. 357-362.
Wsi.sub.x Formation in W-Si Multilayers--S. Eicher et al., Can J. Phys. vol. 65, 1987, pp. 868-871.
Formation Of Ion Beam Mixed Silicides On Si (100) At Elevated Substrate Temperatures--D. Fathy, et al., J. Appl. Phys. 58 (1), 1 Jul. 1985, pp. 297-301.
Pt-Ni Bilayers On n-Type Silicon: Metallurgical And Electrical Behavior--S. Mantovani, et al, J. Appl. Phys. 55 (4), 15 Feb. 1984, pp. 899-9086.
Taper Etching Of The Thermal Oxide Layer--Y.I. Chio, et al, Lee Proceedings, vol. 133, Pt. 1, No. 1, Feb., 1986, pp. 13-17.
Titanium Silicidation Characteristics of the a-Si/Ti/a-Si Multilayer By Rapid Thermal Annealing, Hyung Sup Yoon et al, New Physics, Vo. 30, No. 2, Apr. 1990, pp.180-185.
Thermally Stimulated Interactions In Bilayers And Multilayers Containing Ni And Si During A Temperature Ramp--A. Cvelbar, et al., Informacije MIDEM 25 (1995) 3, pp. 196-204.
Silicide Formation Resulting From The Interfacial Reaction Of Silicon And Thin Films Of Ir-V Alloys And Bilayers--M. Eizenberg, Department of Materials Engineering and Solid State Institute, Technion-Israel Institute of Technology, Haifa, pp. 483-495.

Affiliated with

Also associated with

Rating

Multi-layer gate structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-layer gate structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-layer gate structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-315636