Schottky transistor with low residual voltage

Details Schottky transistor with low residual voltage Schottky transistor with low residual voltage

1977-08-22

1979-12-11

Clawson, Jr., Joseph E.

357 34, 357 35, 357 36, 357 51, H01L 2948

Patent

active

041786033

ABSTRACT:
A planar transistor has its base-collector-pn-junction bridged with a Schottky diode, wherein the degree of coupling of the Schottky diode is modified by means of a semiconducting layer with non-homogenous doping.

REFERENCES:
patent: 3506893 (1970-04-01), Ohaka
patent: 3869622 (1975-03-01), Shimizu
patent: 3943554 (1976-03-01), Russell et al.
patent: 3967307 (1976-06-01), Mueller et al.
patent: 4032962 (1977-06-01), Balyoz et al.
patent: 4054898 (1977-10-01), Streit et al.
R. Knepper, "Reducing the Series Resistance of a Schottky Barrier Diode Clamp for a NPN Transistor," IBM Tech. Discl. Bull., vol. 17, #6, Nov. 1974, pp. 1609, 1610.

Affiliated with

Also associated with

Rating

Schottky transistor with low residual voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky transistor with low residual voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky transistor with low residual voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-313396