Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-05-27
1994-08-30
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257232, 257249, 257250, 348243, 348298, 348313, H01L 2978, H01L 2714, H01L 3100
Patent
active
053430611
ABSTRACT:
An FIT or IT solid-state imaging device comprising a p-type Si substrate in which n-type regions forming storage diode portions, signal read-out portions, n-type CCD channels, and p.sup.+ -type element isolating regions are formed, a solid-state imaging element chip on the top of the substrate in which pixel electrodes are formed, a photo-conductive film stacked above the solid-state imaging element chip, and a transparent electrode formed above the photo-conductive film, wherein a drain for charge injection is further provided in or at one end of the pixel region of the substrate, the potential of the storage diode portion is set to a value almost equal to the potential of the element isolating region immediately before the accumulation of the signal charge, by injecting a specified amount of charge from the drain into the storage diode portion, and during the accumulation of the signal charge, the potential applied to the transparent electrode is set to a value higher than the potential of the storage diode portion set immediately before the accumulation of the signal charge, and the potential of the storage diode portion is made close to the potential of the element isolating layer and the substrate in the vicinity particularly in a case where the amount of incident light is small so that variations in dark current are conspicuous, by injecting holes of the carriers generated by the incident light in the photo-conductive film into the storage diode portion.
REFERENCES:
patent: 4851887 (1989-07-01), Hagiwara
patent: 4912560 (1990-03-01), Osawa et al.
T. Baji, et al., Institute of Television Engineers of Japan Technical Report, vol. 3, No. 33, ED 480, Jan. 1980, pp. 41-46, "A Solid State Imager with Chalcogenide Amorphous Thin Film".
N. Harada, et al., ISSCC Digest of Technical Papers, Feb. 1985, pp. 270-271, "A 1/2" Format Two-Level CCD Imager with 492.times.800 Pixels".
Matsunaga Yoshiyuki
Yamashita Hirofumi
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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