Hard magnetic bias configuration for GMR

Details Hard magnetic bias configuration for GMR Hard magnetic bias configuration for GMR

2001-02-01

2003-06-10

Letscher, George J. (Department: 2653)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

06577477

ABSTRACT:

FIELD OF THE INVENTION
The invention relates to the general field of GMR based magnetic read heads with particular reference to the structure and formation of longitudinal biasing facilities.
BACKGROUND OF THE INVENTION
As areal recording densities reach several Gbits/in
2
, development of next generation giant magnetoresistive (GMR) hard disk drive head is under way. In the GMR head design, a GMR read head sensor consists of a sandwich structure: “sensing free layer”, “conducting space layer”, and “pinned layer”. The magnetization of the free layer is free to respond to external magnetic field from the media. The magnetization of the pinned layer is pinned at about 90° to the magnetization of the free layer. As the conduction electrons are scattered between the free and pinned layers through the spacer, the electrical resistance of the head changes in response to the angle of the directions of magnetization between the free and pinned layers.
In order to obtain a noise-free reproducing waveform, a hard magnetic bias structure is required to suppress the domain walls movement of the free layer. This is accomplished by depositing hard magnetic thin films in an abutting relationship with the free layer on both sides (as seen in plan view). The hard magnetic thin films supply longitudinal magnetic flux to saturate the free layer along its easy axis to a single domain state. The required magnetic flux is approximately the product of remnant magnetization of the free layer and the area of abutting junction. The appearance of the longitudinal bias layer is schematically illustrated in FIG.
1
. Seen there is substrate
11
which has been coated with a magnetic shield layer
12
which, in turn, has been coated with dielectric layer
11
. Layer
14
, which is a cross-sectional view of two parallel stripes (plan view not shown), is a seed layer for the longitudinal bias structure
15
. Layer
16
is a separate seed layer (which may or may not be the same as layer
14
) upon which the free layer of the GMR structure will later be grown.
Currently, a hard bias layer consists of a 100 Å Cr underlayer and a CoCr
5.2
Pt
16.2
magnetic layer. The thickness of the CoCr
5.2
Pt
16.2
layer depends on the magnetic flux required to saturate the GMR free layer. This thickness ranges from 350 to 450 Å. Since the GMR head stack is composed of NiFe, CoFe, Cu[FCC (111)], and MnPt[FCT (111 )] layers, a portion of the hard magnetic films formed on the tapered abutting junction on such a crystal structure tends to have its properties greatly deteriorated, particularly its coercive force. In a recent design, a 50 Å thick Ta seed layer was applied between the Cr underlayer and the abutting junction of the GMR stack. This tantalum layer facilitated growth of Cr BCC (110) over the abutting junction of the GMR stack.
For hard magnetic thin films to be used in a GMR head, three fundamental magnetic properties are required in order to prevent Barkhausen noise (due to domain movement, as mentioned above). First, to ensure that a stable reproducing characteristic is maintained even when an external magnetic field is applied, the hard magnetic thin film must have large coercive force. Second, the in-plane remnant magnetization (M
r
) or M
r
times thickness M
r
t) should be large enough, since this is the component of the hard magnetic thin film that provides the longitudinal bias flux.
If the M
r
of the hard magnetic bias layer is less than the M
r
of the free layer, with the shared abutting junction, longitudinal bias for the free layer is bound to fall short of supplying the necessary flux. This implies that the saturation magnetization (M
s
) and squareness (M
r
/M
s
) of the hysteresis loop of the hard bias layer along the in-plane direction should be high. Furthermore, the hard bias layer should have high thermal stability to prevent long magnetization decay by thermal activation. With the GMR head shield-to-shield spacing getting closer, we also need to reduce the thickness required in the hard magnetic films by using material with high M
s
.
A routine search of the prior art was performed with the following references of interest being found:
The use of longitudinal bias in GMR structures has been disclosed in U.S. Pat. Nos. 5,018,037 and 5,079,035. In U.S. Pat. No. 6,117,570, Chen et al. discuss using CoCrTa layers as a means for increasing the coercivity of CoCrPtTa thin films for use in recording data. They used nickel-aluminum for their seed layer. U.S. Pat. No. 6,020,060 (Yoshida et al.) shows a CoCrTaPt layer while U.S. Pat. No. 5,739,990 (Ravipati et al.), U.S. Pat. No. 5,739,987 (Yuan et al.), U.S. Pat. No. 5,849,422 (Hayashi), U.S. Pat. No. 5,919,581 (Yamamoto et al.), and U.S. Pat. No. 5,919,580(Barnard et al.) all show related patents.
SUMMARY OF THE INVENTION
It has been an object of the present invention to provide a hard bias layer with high Ms, squareness (S), high coercivity (H
c
), and thermal stability through microstructural engineering.
Another object has been to provide a process for manufacturing said bias layer.
These objects have been achieved by inserting an extra layer between the seed layer and the bias layer. This layer has lattice constants that are intermediate between those of the seed and bias layers thereby improving the crystallinity of the latter. Specifically, a layer of chromium-cobalt-tantalum is inserted between a seed layer of chromium, or chromium-titanium, and a hard magnetic (bias) layer of cobalt-chromium-platinum or cobalt-platinum. About 20 Angstroms is optimum for the thickness of this layer. Data is presented showing that significant improvements in coercivity and hysteresis loop squareness are obtained.


REFERENCES:
patent: 5018037 (1991-05-01), Krounbi et al.
patent: 5079035 (1992-01-01), Krounbi et al.
patent: 5739987 (1998-04-01), Yuan et al.
patent: 5739990 (1998-04-01), Ravipati et al.
patent: 5849422 (1998-12-01), Hayashi
patent: 5919580 (1999-07-01), Barnard et al.
patent: 5919581 (1999-07-01), Yamamoto et al.
patent: 5995338 (1999-11-01), Watanabe et al.
patent: 6020060 (2000-02-01), Yoshida et al.
patent: 6117570 (2000-09-01), Chen et al.
patent: 6266210 (2001-07-01), Shiroishi

Affiliated with

Also associated with

Rating

Hard magnetic bias configuration for GMR does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Hard magnetic bias configuration for GMR, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hard magnetic bias configuration for GMR will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3128332