SCR electrostatic discharge protection for integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

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Details

257362, 257363, 257487, H01L 2702

Patent

active

053430530

ABSTRACT:
The invention is a protection circuit for an integrated circuit which includes an SCR switch, a zener diode in parallel with the SCR to trigger the SCR to its on-state, and a zener diode in series with the SCR controls the on-state or clamping voltage of the SCR. The protection circuit is formed in a semiconductor substrate of first conductivity type having a well region of second conductivity type, a first region of first conductivity type in the well and a second region of second conductivity type in the substrate spaced from the well region. The first region, well region, substrate and second region forming the SCR. A third region of second conductivity type is in the well region and contacts the first region to form a first zener diode. A fourth region of second conductivity type is in the substrate and electrically connected to the well region. A fifth region is in the substrate and contacts the fourth region to form a second zener diode.

REFERENCES:
patent: 3904931 (1975-09-01), Leidich
patent: 4400711 (1983-08-01), Avery
patent: 4424711 (1983-11-01), Hubbard
patent: 4611128 (1986-09-01), Patalong
patent: 4631567 (1986-12-01), Kokado
patent: 4692781 (1987-09-01), Roundtree
patent: 5010380 (1991-04-01), Avery
patent: 5060037 (1991-10-01), Rountree
patent: 5072273 (1991-12-01), Avery
patent: 5103154 (1992-04-01), Dropps et al.
patent: 5274262 (1993-12-01), Avery
L. R. Avery, U.S. patent application Ser. No. 07/803,880.

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