Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Reexamination Certificate
1998-12-04
2003-08-19
Cuneo, Kamand (Department: 2829)
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
C324S537000
Reexamination Certificate
active
06608494
ABSTRACT:
FIELD OF THE INVENTION
The invention relates to inspection of integrated circuits, and more particularly to inspection of integrated circuits using photo-emissions.
BACKGROUND OF THE INVENTION
The semiconductor industry has seen tremendous advances in technology in recent years, permitting dramatic increases in circuit density and complexity, and equally dramatic decreases in power consumption and package sizes. Present semiconductor technology now permits single-chip microprocessors with many millions of transistors, operating at speeds of tens (or even hundreds) of MIPS (millions of instructions per second) to be packaged in relatively small, air-cooled semiconductor device packages. A by-product of such high-density and high functionality in semiconductor devices has been the demand for increased numbers of external electrical connections to be present on the exterior of the die and on the exterior of the semiconductor packages which receive the die, for connecting the packaged device to external systems, such as a printed circuit board.
Typically, dies contain a bonding pad which makes the electrical connection to the semiconductor package. To shorten the electrical path to the pad, another packaging technology called flip-chip packaging is employed, where the pads were moved to the side of the die nearest the transistors and other circuit devices formed in the die. Connection to the package is made when the chip is flipped over and soldered. As a result, the dies are commonly called flip chips in the industry. Each bump on a pad connects to a corresponding package inner lead. The packages which result are lower profile and have lower electrical resistance and a shortened electrical path. The plurality of ball-shaped conductive bump contacts (usually solder, or other similar conductive material) are typically disposed in a rectangular array. The packages are occasionally referred to as “Ball Grid Array” (BGA) or “Area Grid Array” packages.
FIG. 1
is a cross-sectional view of an example BGA device
10
. The device
10
includes an integrated circuit
12
mounted upon a larger package substrate
14
. Substrate
14
includes two sets of bonding pads: a first set of bonding pads
16
on an upper surface adjacent to integrated circuit
12
and a second set of bonding pads
18
arranged in a two-dimensional array across an underside surface. Integrated circuit
12
includes a semiconductor substrate
20
having multiple electronic components formed within a circuit layer
22
upon a front side surface of semiconductor substrate
20
during wafer fabrication. The back side surface
23
remains exposed after the device
10
is formed. The electronic components are connected by electrically conductive interconnect lines to form an electronic circuit. Multiple I/O pads
24
are also formed within circuit layer
22
. I/O pads
24
are typically coated with solder to form solder bumps
26
.
The integrated circuit is attached to the package substrate using the controlled collapse chip connection method, which is also known as the C4® or flip-chip method. During the C4 mounting operation, solder bumps
26
are placed in physical contact with corresponding members of the first set of bonding pads
16
. Solder bumps
26
are then heated long enough for the solder to reflow. When the solder cools, I/O pads
24
of integrated circuit
12
are electrically and mechanically coupled to the corresponding members of the first set of bonding pads
16
of the package substrate. After integrated circuit
12
is attached to package substrate
14
, the region between integrated circuit
12
and package substrate
14
is filled with an under-fill material
28
to encapsulate the C4 connections and provide additional mechanical benefits.
Package substrate
14
includes one or more layers of signal lines that connect respective members of the first set of bonding pads
16
and the second set of bonding pads
18
. Members of the second set of bonding pads
18
function as device package terminals and are coated with solder, forming solder balls
30
on the underside surface of package substrate
14
. Solder balls
30
allow BGA device
10
to be surface mounted to an ordinary PCB. During PCB assembly, BGA device
10
is attached to the PCB by reflow of solder balls
30
just as the integrated circuit is attached to the package substrate.
The C4 mounting of integrated circuit
12
to package substrate
14
prevents physical access to circuit layer
22
for failure analysis and fault isolation. Thus, new approaches that are efficient and cost-effective are required.
It is well known that CMOS transistors emit photons during a state change, for example, switching the gate of a transistor. Photons are emitted from transistors at pn junctions, for example. These transient events occur on time scales that are less than 100 ps. Thus, in order to record these events, a very fast detector is required. In addition, a very sensitive detector is required for observing very weak emissions through the backside of the semiconductor because of the absorption losses in the silicon substrate. Another aspect of the emission analysis is to spatially resolve the emissions. It is desired to detect emissions from a single transistor where the device dimensions may be sized less than a micron. Therefore, an apparatus and method that provides fast and cost effective spatially and temporally resolved photoemission analysis of semiconductor circuits is desirable.
SUMMARY OF THE INVENTION
In various embodiments, methods and systems are provided for single point high resolution time resolved photoemission microscopy for an integrated circuit. In one embodiment, an apparatus is provided for analyzing an integrated circuit to which test signals are applied. The apparatus comprises a microscope, an aperture element, and a photo-diode. The microscope has an objective lens that forms a focal plane and is arranged to view the integrated circuit; the aperture element has an aperture which is optically aligned in the focal plane of the microscope; and the aperture element is positioned for viewing a selected area of the integrated circuit. The photo-diode is optically aligned with the aperture to detect photoemissions when test signals are applied to the integrated circuit.
In another embodiment, a process is provided for analyzing an integrated circuit with a microscope having a focal plane behind an objective lens. The process comprises placing an aperture element having an aperture in the focal plane of the objective lens of the microscope and positioning the aperture for viewing a selected area of the integrated circuit. A photo-diode is optically aligned with the aperture, and the integrated circuit is placed in view of the microscope. Test signals are applied to the integrated circuit, and a photo-emission is detected from the selected area of the integrated circuit.
The above summary is not intended to describe each illustrated embodiment or every implementation of the present invention. The figures and the detailed description which follow more particularly exemplify these embodiments.
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Barton, D.L., et al.,Infrared Light Emission From Semiconductor Devices, 22ndInternational Symposium for Testing and Failure Analysis, Nov. 18-22, 1996, Los Angeles, CA., pp. 9-17.
Bruce, Michael R.,Study of Reactive Quenching of Xenon by Chlorides Using Two Photon Laser Excitation, 1990 Dissertation, 1990 University of Texas, pp. 54-64.
Bruce, V.J.,Energy Resolved Emission Microscope, 1993 IEEE/IRPS, CH3194-8/93/0000-0178.
Charbonneau, S.,
Bruce Michael R.
Goruganthu Rama R.
Cuneo Kamand
Hollington Jermele
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