Photomask-pattern-shape evaluation method, photomask, photomask

Details Photomask-pattern-shape evaluation method, photomask, photomask Photomask-pattern-shape evaluation method, photomask, photomask

1997-07-02

1998-10-13

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

058210156

ABSTRACT:
A pattern-shape evaluation method for a photomask used in a photolithography process is provided in order to accurately evaluate pattern corrections performed against the optical proximity effect within mask-line-width latitude, exposure latitude, and the depth of focus. The pattern-shape evaluation method comprises the steps of: specifying a plurality of evaluation patterns to be formed on a photomask and specifying two of the three kinds of latitude; obtaining the transfer pattern corresponding to each of the evaluation patterns with a quantity related to the remaining latitude being changed as a changing quantity; obtaining the sizes of portions on the transfer pattern at the positions on the transfer pattern corresponding to a plurality of measurement points specified in advance on each of the evaluation patterns; and obtaining the minimum value of the changing quantity as the remaining latitude within the two kinds of latitude specified according to the obtained sizes of the transfer pattern and comparing the obtained latitude for each of the evaluation patterns.

REFERENCES:
patent: 5424154 (1995-06-01), Borodovsky
patent: 5447810 (1995-09-01), Chen et al.

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