Antifuse structure suitable for VLSI application

Details Antifuse structure suitable for VLSI application Antifuse structure suitable for VLSI application

1993-11-22

1996-01-16

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257 50, 257751, 257761, 257763, H01L 2900

Patent

active

054850312

ABSTRACT:
The present invention relates to a high performance, high reliability antifuse using conductive electrodes. The problem of switch-off of the programmed antifuses is solved by reducing the thermal conductivity of the conductive electrodes. This is achieved by using lower thermal conductivity conductors for the electrodes or by using thinner electrodes to increase thermal resistance. According to a first aspect of the present invention, the problem of switch-off in conductor-to-conductor antifuses is solved by utilizing conductive electrode materials having a relatively lower thermal conductivity than prior art electrode materials. According to a second aspect of the present invention, the problem of switch-off in conductor-to-conductor antifuses is solved by utilizing relatively thin electrodes, thus increasing their thermal resistance. According to a third aspect of the present invention, a relatively thin barrier layer is placed between one or both of the low thermal conductivity electrodes and the antifuse material in order to prevent reaction between the conductive electrodes and the antifuse material or the materials used in manufacturing such as the etch gas. According to a fourth aspect of the present invention low thermal conductivity conductors are used for both electrodes in the conductor-to-conductor antifuse in order to achieve enhanced reliability and freedom from switch-off. According to a fifth aspect of the present invention switch-off is cured in conductor-to-conductor antifuses without compromising low on-state resistance of the antifuse.

REFERENCES:
patent: 3675090 (1972-07-01), Neale
patent: 3787822 (1974-01-01), Rioult
patent: 4238839 (1980-12-01), Redfern et al.
patent: 4398335 (1983-08-01), Lehrer
patent: 4399372 (1983-08-01), Tanimoto et al.
patent: 4420820 (1983-12-01), Preedy
patent: 4424578 (1984-01-01), Miyamoto
patent: 4445134 (1984-04-01), Miller
patent: 4455495 (1984-06-01), Masuhara et al.
patent: 4488262 (1984-12-01), Basire et al.
patent: 4499557 (1985-02-01), Homberg et al.
patent: 4507756 (1985-03-01), McElroy
patent: 4507757 (1985-03-01), McElroy
patent: 4507851 (1985-04-01), Joyner et al.
patent: 4565712 (1986-01-01), Noguchi et al.
patent: 4569120 (1986-02-01), Stacy et al.
patent: 4569121 (1986-02-01), Lim et al.
patent: 4585490 (1986-04-01), Raffel et al.
patent: 4590589 (1986-05-01), Gerzberg
patent: 4599705 (1986-06-01), Holmberg et al.
patent: 4647340 (1987-03-01), Sziuk et al.
patent: 4678889 (1987-07-01), Yamanaka
patent: 4721868 (1988-01-01), Cornell et al.
patent: 4748490 (1988-05-01), Hollingsworth
patent: 4786904 (1988-11-01), Graham, III et al.
patent: 4792835 (1988-12-01), Sacarisen et al.
patent: 4796074 (1989-01-01), Roesner
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4823181 (1989-04-01), Mohsen et al.
patent: 4839864 (1989-06-01), Fujishima
patent: 4847732 (1989-07-01), Stopper et al.
patent: 4876220 (1989-10-01), Mohsen et al.
patent: 4881114 (1989-11-01), Mohsen et al.
patent: 4882611 (1989-11-01), Blech et al.
patent: 4893167 (1990-01-01), Boudou et al.
patent: 4897836 (1990-01-01), Fitzpatrick et al.
patent: 4899205 (1990-02-01), Hamdy et al.
patent: 4910418 (1990-03-01), Graham et al.
patent: 4914055 (1990-04-01), Gordon et al.
patent: 4916809 (1990-04-01), Boudou et al.
patent: 4924287 (1990-05-01), Orbach
patent: 4937475 (1990-09-01), Rhodes et al.
patent: 5070384 (1991-12-01), McCollum et al.
patent: 5099149 (1992-03-01), Smith
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5166556 (1992-11-01), Hsu et al.
patent: 5191550 (1993-03-01), Kubota
patent: 5196724 (1993-03-01), Gordon et al.
patent: 5210598 (1993-05-01), Nakazaki et al.
patent: 5233217 (1993-08-01), Dixit et al.
patent: 5248632 (1993-09-01), Tung et al.
patent: 5298784 (1994-03-01), Gambino et al.
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5353246 (1994-10-01), Tsang et al.
F. A. Cotton et al. Advanced Inorganic Chemisty Inerscience Publisher (1962) pp. 493-495.
Gullette et al, "Laser Personalization of NMOS Digital Technologies", 02 May 1983, pp. 1249-1252, (IEEE Int. Sym. Cir. & Sys.).
Iscoff, "Characterizing Quickturn ASICs: Its Done with Mirrors", 01 Aug. 1990, pp. 68-73, Semiconductor International.
Chiang et al., "Antifuse Structure Comparison for Field Programmable Gate Arrays", Apr., 1992, pp. 24.6.1-24.6.4, IEDM92.
Hamdy et al., "Dielectric Based Antifuse for Logic and Memory ICs", 1988, pp. 786-789, IEDOM 88.
Hu, "Interconnect Devices for Field Programmable Gate Array", Apr., 1992, pp. 24.1.1-24.1.4, IEDM92.

Affiliated with

Also associated with

Rating

Antifuse structure suitable for VLSI application does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Antifuse structure suitable for VLSI application, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Antifuse structure suitable for VLSI application will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-311478