Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-02-03
1996-01-16
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, H01L 3300, H01L 2978
Patent
active
054850193
ABSTRACT:
A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. Thickness of the oxide is determined depending on purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.
REFERENCES:
patent: 4627153 (1956-12-01), Masuoka
patent: 5132821 (1992-07-01), Nicholas
Hiroki Masaaki
Mase Akira
Takemura Yasuhiko
Uochi Hideki
Yamazaki Shunpei
Ferguson Jr. Gerald J.
Meier Stephen D.
Ngo Ngan V.
Semiconductor Energy Laboratory Co,. Ltd.
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