Modified amorphous semiconductors and method of making the same

Details Modified amorphous semiconductors and method of making the same Modified amorphous semiconductors and method of making the same

1978-03-22

1979-12-11

Padgett, Benjamin R.

Stock material or miscellaneous articles

Composite

Of silicon containing

252500, 252512, 204192S, 427 93, 427248C, 357 2, H01B 102

Patent

active

041784154

ABSTRACT:
An amorphous semiconductor film includes an amorphous semiconductor host matrix, such as silicon or silicon and oxygen, and a modifier material comprising an alkali metal, such as lithium, incorporated therein by codeposition of the same. The modifier material incorporated in the amorphous host matrix controls the electrical conductivity of the film and other phenomena associated therewith.

REFERENCES:
patent: 3917491 (1975-11-01), Oswald, Jr. et al.

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