Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-12-02
1999-02-23
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257635, H01L 2348, H01L 2352, H01L 2940
Patent
active
058747770
DESCRIPTION:
BRIEF SUMMARY
TECHNOLOGICAL FIELD
The present invention relates to a semiconductor device, and more particularly to a semiconductcr device which is suitably used for an ultra-high density integrated circuit (ULSI) by forming through holes (TH) or dummy holes (DH) in layer insulators interposed between multilayered wires having low resistance formed of metals or the like to thereby prevent increase in temperature of the wires.
Background Art
With respect to semiconductor devices which are called as ICs or LSIs, the integration of various elements constituting these device has been recently inclined to be enhanced more greatly. This inclination of the semiconductor devices promotes increase in length and area of wires used for these devices, and in order to increase the length and area of the wires, a multilayer interconnection structure comprising two or more layers has been utilized. As the most general multilayer interconnection structure has been known such a structure that plural wiring layers of Al are electrically insulated from one another by SiO.sub.2 films or polyimide films. When the wiring structure is complicated as described above, it is not too much to say that a semiconductor device is mostly constructed by wires constituting the multilayer wiring structure from the view of its cross-sectional structure because these wires are disposed to cross over various elements of the semiconductor device.
The problems of the semiconductor device having the multilayer wiring structure as described above and conventional methods of solving these problems will be hereunder described.
(1) Electro-Migration
The semiconductor device as described above is required to be operated at high speed in addition to the requirement of high integration of various elements constituting the semiconductor device, resulting in increase of current which flows in the wires. For example, in conventional semiconductor devices, the current density per unit sectional area of wires is set in the order of 10.sup.5 (A/cm.sup.2).
In such a current density region, occurrence of a phenomenon that metal atoms of wiring materials (for example, Al) are migrated due to the current flowing in the wires, that is, an electromigration phenomenon is a critical problem. In this phenomenon, protuberances called as "hillock" and holes called as "void" occur at places where the metal atoms are accumulated due to the electromigration thereof. As a result, the hillocks cause short-circuit to other wires, and the voids increase wiring resistance and cause local overcurrent to break the wires.
In order to solve this problem, the following methods have been proposed and practically used: electromigration; and the lower surface of the wires.
(2) Stress-Migration
Recently, not only the integration of various device elements, but also the operation speed of the device has been also required to be further enhanced, and thus a larger amount of current has been required to flow into wires. That is, the required current density per unit sectional area of wires is increasing from the order of 10.sup.5 (A/cm.sup.2) to the order of 10.sup.6 (A/cm.sup.2). A design trend to form finer wiring patterns reduces the sectional area of the wires to a smaller value than the conventional devices. On the other hand, in order to keep the driving capability of the devices, the current flowing in the wires must be kept to have the same current level as the conventional devices. Therefore, the current density increases more and more every the generation of LSIs is changed. However, when current having such a large current density flows in low-resistance wires, the wires are heated by Joule heat.
Further, a high-frequency pulse signal (current) such as clocks, etc. flows in the semiconductor device. This pulse signal is also required to have higher frequency in order to achieve the higher-speed operation of the elements. The increase of the frequency of the pulse signal applied to the semiconductor device causes occurrence of a heat cycle in low-resistance wires due to variation of the Jo
REFERENCES:
patent: 5625232 (1997-04-01), Numata et al.
patent: 5663599 (1997-09-01), Lur
patent: 5675187 (1997-10-01), Numata et al.
Ohmi Tadahiro
Takewaki Toshiyuki
Tsubouchi Kazuo
Clark S. V.
Jackson Jerome
Knuth Randall J.
Ohmi Tadahiro
LandOfFree
Semiconductor device with enhanced thermal conductivity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device with enhanced thermal conductivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with enhanced thermal conductivity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-309937