Thin film transistor with carbonaceous gate dielectric

Details Thin film transistor with carbonaceous gate dielectric Thin film transistor with carbonaceous gate dielectric

1997-08-05

1999-02-23

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257324, 257406, 257410, 257411, H01L 2978

Patent

active

058747451

ABSTRACT:
A gate dielectric layer comprising a carbon film aligned to, and continuously covering, the gate electrode. The carbon dielectric film adheres to a wide variety of gate metals and is readily etched using etch processes which do not etch into the gate metal. In a preferred embodiment, the self-aligned carbon gate dielectric is deposited by plasma deposition, followed by deposition of a redundant gate dielectric.

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patent: 5614731 (1997-03-01), Uchikoga et al.
patent: 5710606 (1998-01-01), Nakajima et al.
patent: 5719422 (1998-02-01), Burr et al.

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