Formation of epitaxial tunnels utilizing oriented growth techniq

Details Formation of epitaxial tunnels utilizing oriented growth techniq Formation of epitaxial tunnels utilizing oriented growth techniq

1979-03-05

1979-12-11

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 29578, 29580, 148 15, 148174, 156612, 156647, 357 20, 357 55, 357 56, 357 60, 357 88, 350 96WG, H01L 2120, H01L 21467, H01L 2176

Patent

active

041781970

ABSTRACT:
Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques.

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Canavello et al., "Vapor Grown III-V Compound Inlays", I.B.M. Tech. Discl. Bull., vol. 6, No. 2, Jul. 1963, p. 86.
Shaw, D. W., "Influence of Substrate Orientation . . . . Growth Rates", Proc. 1968 Symposium on GaAs, paper No. 8, pp. 50-53.
Tausch et al., "Novel Crystal Growth . . . GaAs . . . Onto Silicon Dioxide", J. Electrochem. Soc., vol. 112, No. 7, Jul. 1965, pp. 706-709.
Iida et al., "Morphological Studies on Selective Growth of GaAs", J. Crystal Growth 13/14 (1972), pp. 336-341.

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