Method of making a bipolar transistor with high-low emitter impu

Details Method of making a bipolar transistor with high-low emitter impu Method of making a bipolar transistor with high-low emitter impu

1978-10-10

1979-12-11

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 34, 357 91, H01L 2972, H01L 2902, H01L 2100

Patent

active

041781902

ABSTRACT:
An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region.

REFERENCES:
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patent: 4007474 (1977-02-01), Yagi et al.
patent: 4021270 (1977-05-01), Hunt et al.
patent: 4032957 (1977-06-01), Yagi et al.
patent: 4035824 (1977-07-01), Suzuki
patent: 4045251 (1977-08-01), Graul et al.
patent: 4049478 (1977-09-01), Ghosh et al.
patent: 4054899 (1977-10-01), Stehlin
patent: 4113512 (1978-09-01), Ayers et al.
Aggarwal, "Emitter Structure . . . " IBM-TDB, vol. 19 (1976), p. 162.
Yagi et al., ". . . Bipolar Device . . . Low Emitter . . . Conc'n." Suppl. Jr., Jap. Soc. Appl. Phys., vol. 44 (1975), p. 279.
Joshi et al., "Phosphorus Emitter . . . " IBM-TDB, vol. 13 (1970), p. 1066.
Hinrichs, "The Planar Technique . . . " Scientia Electrica, vol. 10 (1964), p. 97.

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