Process for forming semiconductor thin film

Details Process for forming semiconductor thin film Process for forming semiconductor thin film

1994-07-05

1996-01-16

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 84, 437101, 20419225, 2041923, H01L 21203

Patent

active

054847460

ABSTRACT:
A process for forming a semiconductor thin film by forming an amorphous semiconductor film on a substrate having a surface comprising an amorphous insulating material and seed crystals arranged at desired positions, applying heat treatment on the amorphous semiconductor film and growing crystals by solid phase growth with the seed crystals as the origination points is characterized in that high frequency energies with different frequencies are supplied to a susceptor having the substrate mounted thereon and a target holder to irradiate the ions generated between the susceptor and the target holder to the substrate and remove the surface adherents on the substrate, and subsequently an amorphous semiconductor film is formed on the substrate within the same apparatus.

REFERENCES:
patent: 3021271 (1962-02-01), Wehner
patent: 3704219 (1971-04-01), McDowell
patent: 4585517 (1986-04-01), Stemple
patent: 4757030 (1988-07-01), Galvin et al.
patent: 4772564 (1988-09-01), Barnett et al.
patent: 4824546 (1989-04-01), Ohmi
patent: 4977096 (1990-12-01), Shimada et al.
Moustakas, "Studies of Thin Film Growth of Sputtered Hydrogenated Amorphous Silicon", Solar Energy Materials 8 (1982) 187-204.
Allison et al., "Further Optimization of Amorphous Hydrogenated Silicon . . . ", Proc., 3rd European Community Photovoltaic Solar Energy Conference, Cannes France, Oct. 27-31, 1980.
Martin et al., "Property Composition Relationships in Sputter-Deposited .alpha.-Si:H Alloys", Solar Energy Materials 2(1979/1980) 143-157.
European Search Report dated Apr. 6, 1994.
Applied Physics Letters, vol. 48, No. 12, Mar. 24, 1986, pp. 773-775.
Japanese Journal of Applied Physics, vol. 26, No. 11, Nov. 1987, pp. 1815-1817.
Ohmi et al., "In-Situ Substrate Surface Cleaning for Very Low Temperature Silicon Epitaxy . . . ", Appl. Phys. Lett. vol. 53, No. 1, pp. 45-47 (Jul. 4, 1988).
Ohmi et al., "Low Temperature Silicon Epitaxy by Low-Energy Bias Sputtering", Appl. Phys. Lett. vol. 53, No. 5, pp. 364-366 (Aug. 1, 1988).

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