Method of making increased-density flash EPROM that requires les

Details Method of making increased-density flash EPROM that requires les Method of making increased-density flash EPROM that requires les

1995-05-11

1996-01-16

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 49, 437195, H01L 218247

Patent

active

054847419

ABSTRACT:
A series of self-aligned, intermediate strips of conductive material are formed to contact each of the drain regions in a corresponding number of columns of drain regions in a flash electrically programmable read-only-memory (EPROM). In addition, a corresponding series of metal bit lines are formed to periodically contact the series of intermediate strips of conductive material. By utilizing intermediate strips of conductive material which are self-aligned to the drains of the memory cells of the flash EPROM, the area required for each drain contact can be significantly reduced. By then utilizing the series of metal bit lines to periodically contact the series of intermediate strips, conventional techniques can be utilized to form the metal bit lines.

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patent: 4720323 (1988-01-01), Sato
patent: 4830974 (1989-05-01), Chang et al.
patent: 5235200 (1993-08-01), Komori et al.
patent: 5270240 (1993-12-01), Lee
patent: 5371030 (1994-12-01), Bergemont
patent: 5376573 (1994-12-01), Richart et al.

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