Method of leveling the laminated surface of a semiconductor subs

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437190, 156626, 156643, 156644, 156653, H01L 2100

Patent

active

052721159

ABSTRACT:
Disclosed is an improved method of leveling the laminated surface of a semiconductor substrate, which method permits the exact controlling of the etching of the lamination on the semiconductor substrate by detecting the sudden change of the amount of the gas resulting from the chemical reaction of the materials of the different layers with particular selected elements of surrounding plasma gas, thus assuring the reproducibility of leveled semiconductor substrate surface.

REFERENCES:
patent: 4479848 (1984-10-01), Otsubo et al.
patent: 4946550 (1990-08-01), Van Laarhoven
patent: 4965226 (1990-10-01), Gootzen et al.
patent: 4975141 (1990-12-01), Greco et al.
patent: 5169491 (1992-12-01), Doan
S. K. Ghandhi, VLSI Fabrication Principles, John Wiley and Sons, New York, 1983, pp. 504-510.
Tummala et al., ed., Microelectronics Packaging Handbook, Van Nostrand Reinhold, New York, 1989, pp. 560-565.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of leveling the laminated surface of a semiconductor subs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of leveling the laminated surface of a semiconductor subs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of leveling the laminated surface of a semiconductor subs will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-308834

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.