Fishing – trapping – and vermin destroying
Patent
1992-03-31
1993-12-21
Wilczewski, Mary
Fishing, trapping, and vermin destroying
437133, 372 45, 372 46, H01L 2120, H01S 319
Patent
active
052721094
ABSTRACT:
A method for fabricating a visible light laser diode includes growing a double heterojunction structure of AlGaInP/GaInP/AlGaInP on a GaAs substrate, forming a stripe-shaped ridge in the double heterojunction structure using a dielectric film as an etching mask, selectively growing n type GaAs by MOCVD using the dielectric film as a growth mask to form a GaAs current blocking layer burying the ridge, removing the dielectric film and growing a GaAs contact layer on the current blocking layer and the ridge. The step of selectively growing the GaAs current blocking layer includes growing a first GaAs layer on the double heterojunction structure at both sides of the ridge and on the side walls of the ridge using triethylgallium (TEG) as a Ga source and growing a second GaAs layer on the first GaAs layer using trimethylgallium (TMG) as a Ga source. The side walls of the ridge are covered by the first GaAs layer and are not exposed to a high temperature in an AsH.sub.3 ambient, thereby reducing damage to the double heterojunction structure. In addition, since the second GaAs layer is grown using TMG as the Ga source, cavities are not produced in the GaAs layer.
REFERENCES:
patent: 5003549 (1991-03-01), Mitsui et al.
patent: 5023199 (1991-06-01), Murakami et al.
patent: 5053356 (1991-10-01), Mitsui et al.
patent: 5079184 (1992-01-01), Hatano et al.
patent: 5151913 (1992-09-01), Ueno
patent: 5168077 (1992-12-01), Ashizawa et al.
Tanaka et al, "Transverse-Mode-Stabilized Ridge Stripe AlGaInP Semiconductor Lasers Incorporating A Thin GaAs Etch-Stop Layer", Applied Physics Letters, vol. 54, No. 15, 1989, pp. 1391-1393.
Nitta et al, "Astigmatism In Ridge-Stripe InGaAlP Laser Diodes", Japanese Journal of Applied Physics, vol. 28, No. 11, 1989, pp. L2089-L2091.
Kawata et al, "Room-Temperature, Continuous-Wave Operation for Mode-Stabilised AlGaInP Visible-Light Semiconductor Laser with a Multiquantum-Well Active Layer", Electronics Letters, vol. 24, No. 24, 1988, pp. 1489-1490.
Kobayashi et al., "AlGaInP Double Heterostructure Visible-Light Laser Diodes with a GaInP Active Layer Grown by Metalorganic Vapor Phase Epitaxy", IEEE Journal of Quantum Electronics vol. QE-23, No. 6, Jun. 1987, pp. 704-711.
Bour et al, "Organic Vapor Epitaxial Growth of (Al.sub.x Ga.sub.1-x (.sub.0.5 In.sub.0.5 P and its Heterostructures", IEEE Journal of Quantum Electronics, vol. 14, No. 9, Sep. 1988, pp. 1856-1863.
Ohba et al, "Pulsed Operation of InGaAlP/InGaP DH Lasers Prepared by MOCDV Employing Methyl Metalorganics", Institute of Physics Conference, Series 79, Chapter 12, 1985, pp. 679-684.
Katsuyama et al, "Very Low Threshold Current AlGaInP/Ga.sub.x In.sub.1-x P Strained Single Quantum Well Visible Laser Diode", Electronics Letters, vol. 26, No. 17 Aug. 1990, pp. 1375-1377.
Mitsubishi Denki & Kabushiki Kaisha
Wilczewski Mary
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