Manufacture of silicon carbide (SiC) metal oxide semiconductor (

Details Manufacture of silicon carbide (SiC) metal oxide semiconductor ( Manufacture of silicon carbide (SiC) metal oxide semiconductor (

1991-09-09

1993-12-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437233, 437239, H01L 21316

Patent

active

052721078

ABSTRACT:
A silicon thin-film is formed on a silicon carbide (SiC) semiconductor body through the use of the thermal decomposition of monosilane (SiH.sub.4) gas. The thus formed silicon thin-film is oxidized by a thermal oxidation method which employs an oxygen gas so as to form a silicon oxide film of about 600 to 1200 .ANG. on the silicon carbide (SiC) semiconductor. The silicon oxide film shows a sharp boundary between the silicon carbide (SiC) semiconductor.
An aluminum electrode is formed on the silicon oxide film, thereby providing a MOS structure on the silicon carbide (SiC) semiconductor.

REFERENCES:
patent: 3911168 (1975-10-01), Schinella et al.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, Inc., New York, N.Y. (1983), p. 388.
Jackson et al., "Fabrication of Epitaxial SiC Films on Silicon", Trans. Met. Soc. AIME, vol. 233, pp. 468-472 (Mar. 1965).
Suzuki et al., "C-V characteristics of SiC MOS diodes with a thermal grown SiO.sub.2 layer," Appl. Phys. Lett 39(1) Jul. 81.
Suzuki et al. "Thermal Oxidation of SiC and Electrical Properties of Al-ScO.sub.2 -SiC MOS Structure," Jap J of App Phys vol. 24, Nov. 4, Apr. 82.
DiMaria, "Interface effects and high conductivity in oxides grown from polycrystalline silicon," App Phys Lett vol. 24, No. 9 Nov. 75.
Ghandhi, VLSI Fabrication, Silicon and Gallium Arsenide, Wiley-Interscience Publication 1983.

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