Field effect transistor with T-shaped gate electrode and manufac

Details Field effect transistor with T-shaped gate electrode and manufac Field effect transistor with T-shaped gate electrode and manufac

1991-08-07

1993-12-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 36, 437 44, H01L 21335

Patent

active

052721000

ABSTRACT:
A field effect transistor comprises n type impurity regions formed spaced apart on a P type semiconductor substrate to be the source.multidot.drain regions and a T-shaped gate electrode formed on the region sandwiched by the n type impurity regions with an insulating film interposed therebetween, the gate electrode being formed of upper and lower two layers with the upper layer wider than the lower layer, wherein a n type channel region is formed between the source and the drain when the prescribed voltage is applied to the T-shaped gate electrode.

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