Mask for manufacturing semiconductor device and method of manufa

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430 22, 430269, 430311, 430396, G03F 900

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054846714

ABSTRACT:
The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180.degree. is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.

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Ito, et al "Photo-projection Image Distortion Corrections for lu For lu Pattern Process", May 1985, vol. J68, No. 5 (1985), pp. 225-332.
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