Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1992-04-08
1993-12-21
McCamish, Marion E.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430311, 430323, G03F 900
Patent
active
052720241
ABSTRACT:
A phase-shifting mask is composed of material including a substrate carrying a first phase-shifting layer having a phase-shift of .THETA., a second phase-shifting layer stacked upon the first layer having a phase-shift of (2.pi.-.THETA.), and a third phase-shifting layer stacked upon the second layer next with a phase-shift of .THETA.. Missing phase-shifters, unwanted phase-shifters, or defects in the transparent films are repaired by removing one or two layers depending upon whether the phase-shifting status has to be retained or altered. In one alternative a large etch selectivity exists between the first, second and third layers, or else a lack of etch selectivity is complemented with etch stop layers embedded between the phase-shifting layers as follows: a) if an defect is found in a phase-shifted area and the defect must be removed without turning the phase-shifted area into a non-phase-shifted area, then two successive layers in the phase-shifted area are removed; b) if an error is found in a non-phase-shift area, then the mask can be repaired in the area surrounding the error by removing the layer in the area to make the area a phase-shifted area; c) if a defect is found in a non-phase-shifted area and the defect must be removed without turning the phase-shifted area into a phase-shifted area, then two successive layers in the non-phase-shifted area are removed.
REFERENCES:
patent: 4360586 (1982-11-01), Flanders, et al.
patent: 4608326 (1986-08-01), Newkermans et al.
patent: 4789611 (1988-12-01), Miyahara
patent: 4890309 (1989-12-01), Smith et al.
patent: 4906326 (1990-03-01), Amemiya et al.
patent: 5045417 (1991-09-01), Kamoto
patent: 5085957 (1992-02-01), Hosono
M. D. Levenson, "Improving Resolution in Photolithograph with a Phase-Shifting Mask", IEEE Translations on Electron Devices, vol. ED-29, No. 12, pp. 1828, 1836 (Dec. 1982).
A. Nitayama, et al., "New Phase Shifting Mask with Self-Aligned Phase Shifters for a Quarter Micron Photolithography", IEDM pp. 57-60 (1989).
T. Terasawa, et al., "0.3-Micron Optical Lithograph Using a Phase-Shifting Mask", SPIE vol. 1088 Optical/Laser Microlithography II pp. 25-33 (1989).
Crockatt Dale M.
International Business Machines - Corporation
Jones II Graham S.
McCamish Marion E.
Rosasco S.
LandOfFree
Mask-structure and process to repair missing or unwanted phase-s does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask-structure and process to repair missing or unwanted phase-s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask-structure and process to repair missing or unwanted phase-s will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-308050