Method of cleaning silicon wafers in cleaning baths with control

Details Method of cleaning silicon wafers in cleaning baths with control Method of cleaning silicon wafers in cleaning baths with control

1995-05-11

1997-09-02

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 32, 134 34, B08B 304, C23G 102

Patent

active

056627432

ABSTRACT:
A novel HF cleaning method of silicon wafers is provided whereby the wafers are cleaned with a lowered level of particle contamination on the surface thereof. In the method silicon wafers are immersed in a HF bath, followed by immersion in a deionized water bath. The silicon wafers are lowered into and lifted out of each bath along a direction which is substantially vertical with respect to a surface of each bath at a rate of from 1 mm/sec to 50 mm/sec. During immersion, a vertical oscillation of the surface of each bath is maintained in the range of less than 4 mm.

REFERENCES:
patent: 5071488 (1991-12-01), Takayama et al.
patent: 5158616 (1992-10-01), Kinoshita et al.
patent: 5277715 (1994-01-01), Cathey
patent: 5346556 (1994-09-01), Perry et al.
patent: 5372651 (1994-12-01), Kodama
patent: 5382296 (1995-01-01), Anttila
patent: 5415698 (1995-05-01), Fujinaga et al.
Journal of the Electrochemical Society, vol. 137, No. 10, Oct. 1, 1990, Akihiro Miyauchi et al. "Low-Temperature (900.degree.C) Si Epitaxial Growth on Si (100) after HF Treatment"; pp. 3257-3260.

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