Method for producing single-crystal silicon by chemical vapor de

Details Method for producing single-crystal silicon by chemical vapor de Method for producing single-crystal silicon by chemical vapor de

1994-04-11

1996-01-16

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

23295R, 117 92, C30B 2502

Patent

active

054839181

ABSTRACT:
A silicon single crystal for use as semiconductor is grown by supplying, to a seed rod of single-crystal silicon, hydrochloride gas and silicon formed by admixing at least one chlorosilane gas selected from the group consisting of dichlorosilane, trichlorosilane and tetrachlorosilane with hydrogen gas at a high temperature to grow single-crystal silicon on the seed rod while etching the growing single-crystal silicon with the hydrochloride gas. The silicon single crystal is irradiated with laser rays so that the energy of the laser rays on the irradiated surface of the crystal ranges from 3100 to 3358 mW/cm.sup.2 and then spectra emitted by the crystal are optoelectrically determined to quantify the ultratrace elements present in the silicon single crystal. Moreover, the amounts of these ultratrace elements are reduced to those of ultratrace elements present in the chlorosilane gas.

REFERENCES:
patent: 4234355 (1980-11-01), Meinders
patent: 4415373 (1983-11-01), Pressley
patent: 4679308 (1987-07-01), Finn et al.

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