Method of forming self-aligned contact openings

Details Method of forming self-aligned contact openings Method of forming self-aligned contact openings

1984-02-23

1985-04-23

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29579, 29589, 148 15, 148187, 148188, 357 41, 357 44, 357 59, 357 65, H01L 21265, H01L 2128

Patent

active

045120730

ABSTRACT:
A process for forming reliable contacts in a VLSI device wherein, after the source and drain regions have been formed, the contact openings are formed and the source and drain regions redoped. A heat treatment step anneals surface damage and causes lateral migration of the implanted ions to preclude the contact from forming a short circuit between the doped region and the substrate exposed as a result of any misalignment of the contact openings. As an added benefit, the process also prevents the contact from "spiking" through the doped region to the underlying substrate.

REFERENCES:
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patent: 4114256 (1978-09-01), Thibault et al.
patent: 4124934 (1978-11-01), De Brebisson
patent: 4151631 (1979-05-01), Klein
patent: 4196443 (1980-04-01), Dingwall
patent: 4231820 (1980-11-01), Henry
patent: 4304042 (1981-12-01), Yeh
patent: 4371403 (1983-02-01), Ikubo et al.
patent: 4373254 (1983-02-01), Blumenfeld
patent: 4404733 (1983-09-01), Sasaki
patent: 4406710 (1983-09-01), Davies et al.
patent: 4433468 (1984-02-01), Kawamata
"Reactive Sputter Etching of Dielectrics", M. T. Duffy, et al., RCA Review, vol. 44, Mar. 1983, pp. 157-168.

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