Transistor having emitter resistors for stabilization at high po

Details Transistor having emitter resistors for stabilization at high po Transistor having emitter resistors for stabilization at high po

1979-04-24

1981-05-05

Larkins, William D.

357 28, 357 36, 357 51, 357 86, H01L 2972

Patent

active

042662362

ABSTRACT:
A technique of increasing the safe operating area of a power transistor is disclosed which comprises the addition of a resistive region of a conductivity (P or N) opposite that of the emitter conductivity, the resistive region located between the emitter region and the emitter electrode so as to prevent local thermal runaway of the emitter current and the concomitant secondary breakdown of the transistor. A conducting electrode connects the emitter region to the resistive region to thereby short-circuit the resistive-emitter region junction.

REFERENCES:
patent: 3358197 (1967-12-01), Scarlett
patent: 3519898 (1970-07-01), Natani
patent: 3619741 (1971-11-01), Morgan et al.
patent: 3740621 (1973-06-01), Carley
patent: 3769561 (1973-10-01), White et al.
patent: 3801886 (1974-04-01), Imaizumi et al.
patent: 3858234 (1974-12-01), Olson
patent: 3893154 (1975-07-01), Mroczek et al.
patent: 3918080 (1975-11-01), Kerr
patent: 3936863 (1976-02-01), Olmstead

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