Semiconductor integrated circuit with isolation region made of d

Details Semiconductor integrated circuit with isolation region made of d Semiconductor integrated circuit with isolation region made of d

1984-08-06

1985-11-05

Larkins, William D.

357 2311, 357 55, H01L 2176, H01L 21302, H01L 2704, H01L 2978

Patent

active

045517436

ABSTRACT:
A semiconductor integrated circuit includes pouch-shaped (in sectional view) isolation regions made of dielectric material consisting of boron and phosphor doped silicate glass. A circuit component is formed in an active region surrounded by adjacent isolation regions. Each pouch-shaped (in sectional view) isolation region is made using an anisotropic etchant and an isotropic etchant successively. There is a method for manufacturing the above device with high integration density and high operating speed.

REFERENCES:
patent: 4019248 (1977-04-01), Black
patent: 4209349 (1980-06-01), Ho et al.
patent: 4264382 (1981-04-01), Anantha et al.
patent: 4318751 (1982-03-01), Horng
"Glass Forming Technique", H. S. Lehman, IBM Tech. _Disclosure Bulletin, vol. 8, No. 4, Sep. 1965, pp. 477-478.

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