Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1983-10-24
1985-11-05
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307246, 307597, 307304, 307575, H03K 17284, H03K 1730, H03K 1772
Patent
active
045516430
ABSTRACT:
A four layer insulated gate controlled semiconductor device has a range of anode-cathode currents over which gate control potentials will extinguish such anode-cathode current. Coupling circuitry for limiting the rate of change of turn-off gate control potential to the gate of the device enhances the range of anode-cathode current over which control is maintained.
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J. P. Russell et al., "The COMFET-A New High Conductance MOS-Gated Device", IEEE E.D. Letters, vol. EDL-4, No. 3, Mar. 1983, pp. 63-65.
GE Preliminary Data Sheet D94FQ4, R4, "Power-MOS 1GT Insulated Gate Transistor", Jun. 1983.
B. J. Baliga et al., "Modulated-Conductivity Devices Reduce Switching Losses", EDN 9/29/83, pp. 153-162.
Goodman Alvin M.
Russell John P.
Anagnos Larry N.
Haas George E.
RCA Corporation
Schanzer Henry I.
Tripoli Joseph S.
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