Method of simultaneously controlling the lifetimes and leakage c

Details Method of simultaneously controlling the lifetimes and leakage c Method of simultaneously controlling the lifetimes and leakage c

1978-01-31

1980-07-01

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 23, 357 29, 357 91, H01L 21263, C03C 304

Patent

active

042104645

ABSTRACT:
The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.

REFERENCES:
patent: 3551171 (1970-12-01), Thomas
patent: 3778242 (1973-12-01), Francel et al.
patent: 3829961 (1974-08-01), Bauerlein et al.
patent: 3933527 (1976-01-01), Tarnesa et al.
patent: 3938178 (1976-02-01), Miura et al.
patent: 4043836 (1977-08-01), Sheng et al.
patent: 4043837 (1977-08-01), Cresswell et al.
patent: 4076555 (1978-02-01), Chu et al.
patent: 4080621 (1978-03-01), Funakawa et al.

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