Bipolar semiconductor device

Details Bipolar semiconductor device Bipolar semiconductor device

1988-10-13

1991-02-26

Larkins, William D.

357 13, 357 36, 357 46, 357 59, H01L 2704

Patent

active

049965808

ABSTRACT:
A test structure for measuring bipolar transistor gain has a base contacting region (16) doped the same conductivity type as the emitter region (13). The base contacting region (16) is located within a region (15) overlapping with and more heavily doped than the transistor base (12). Polysilicon contacts 21, 22 are provided respectively to the transistor emitter 13 and to the base contacting region 16.

REFERENCES:
patent: 4213806 (1980-07-01), Tsang
patent: 4283733 (1981-08-01), Aomura
patent: 4319257 (1982-03-01), Beasom
patent: 4435225 (1984-03-01), Shideler
Muller & Kamins, "Device Electronics . . . ", (1986), p. 96.
L. Glasser & D. Dubberpuhl, "The Design & Analysis of VLSI Circuits", Addison-Wesley Pub. Co., Reading, Mass., p. 185, 1985.

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