Sensor using a field effect transistor and method of fabricating

Details Sensor using a field effect transistor and method of fabricating Sensor using a field effect transistor and method of fabricating

1989-05-15

1990-10-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

435291, H01L 21265

Patent

active

049607227

ABSTRACT:
Disclosed is a sensor using a field effect transistor. The sensor includes a field effect transistor having a gate electrode, a reactive monomolecular film formed on the surface of the gate electrode, and a sensing material fixed on the gate electrode through a reactive monomolecular film by the chemical bond. A sensing material is strongly bonded to the reactive monomolecular film in such manner that the sensing material is kept alive. Thereby, sensitivity of the sensor is improved.

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patent: 4562157 (1985-12-01), Lowe et al.
patent: 4670390 (1987-06-01), Antal Nee Magyar
patent: 4683203 (1987-07-01), Anton et al.

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