1978-11-13
1981-04-07
Larkins, William D.
357 44, 357 86, 357 89, H01L 2704
Patent
active
042610028
ABSTRACT:
A semiconductor device includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portions form, respectively, the collector region of a first of the transistors and the emitter region of a second of the transistors. An electrode is provided on the lower face of the substrate to connect together the two adjacent portions of the substrate. The invention is particularly applicable to mixed Darlington amplifier structures and push-pull amplifiers composed of such structures.
REFERENCES:
patent: 3412295 (1968-11-01), Grebene
patent: 3449643 (1979-06-01), Imaizumi
patent: 3909318 (1975-09-01), Le Can et al.
patent: 3930909 (1976-01-01), Schmitz et al.
patent: 3998674 (1976-12-01), Cameron et al.
patent: 4058825 (1977-11-01), Bonis et al.
Biren Steven R.
Briody Thomas A.
Larkins William D.
Mayer Robert T.
U.S. Philips Corporation
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